PART |
Description |
Maker |
M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V http://
|
M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY 16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
PM39F010 PM39F010-55JCE PM39F010-55PCE PM39F010-70 |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra, Inc]
|
SST39VF6402-90-4I-EKE SST39VF1601 SST39VF1601_05 S |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
SST[Silicon Storage Technology, Inc]
|
SST39SF010A SST39SF010A-45-4C-NH SST39SF010A-45-4C |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology Inc] SST[Silicon Storage Technology, Inc]
|
DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F0 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
|
INTEL[Intel Corporation]
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol... SST[Silicon Storage Technology, Inc] Silicon Storage Technology, Inc. http://
|